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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.8A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：26.5mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：720mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3042L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 5.8A at 25°C. The device offers a maximum on-resistance of 26.5mΩ at VGS=10V and 32mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes a standard SOT-23 package.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance
- Provides superior switching performance combined with low input capacitance
- Features low gate threshold voltage and low input/output leakage characteristics
Applications
- Battery charging systems
- Power management functions
- DC-DC converters
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the selected part matches the required thermal and electrical specifications for the intended circuit design before finalizing procurement.
Selection Notes
Select this component when a 30V N-channel MOSFET with low on-resistance is required for portable or battery-powered designs. Consider the SOT-23 package constraints regarding thermal dissipation and current handling capabilities. Evaluate the gate charge and threshold voltage requirements against the driving circuit's output capabilities to ensure efficient switching operation.
Part Context
This component belongs to the DMN3042 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low on-state resistance with fast switching speeds. The DMN3042L-13 variant specifically denotes the standard SOT-23 package configuration supplied in a 10,000-unit tape and reel format for automated assembly processes.
Replacement Considerations
Direct replacements must match the 30V rating, SOT-23 package, and similar RDS(on) specifications. Verify pinout compatibility and thermal characteristics. Consult manufacturer cross-reference lists for equivalent parts ensuring identical electrical parameters and package dimensions.
