DMN3042LFDF-13

$0.10

Description：MOSFET N-CH 30V 7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:90e7f65bc6d5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.3 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3042LFDF-13

Overview

The DMN3042LFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 7.0A at +25°C ambient temperature. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 28mΩ at VGS=10V and 4.0A, or 32mΩ at VGS=4.5V and 4.0A. It utilizes a U-DFN2020-6 (Type F) surface-mount package with a profile height of approximately 0.6mm. Total power dissipation reaches 2.1W when mounted on an FR-4 substrate with a 1-inch square copper plate at +25°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -13 suffix indicates a tape and reel quantity of 10,000 units. Confirm that the required component meets automotive quality standards if applicable, as standard production may differ from AEC-Q101 qualified parts. Ensure the design accommodates the specified thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring a compact footprint with a 4mm² PCB area. Consider the 30V breakdown voltage and 7A current capability for low-voltage switching tasks. Evaluate the gate threshold voltage range of 0.6V to 1.4V for compatibility with logic-level drive signals. Assess thermal performance based on the specific copper plane area available on the printed circuit board.

Part Context

This part belongs to the DMN3042LFDF series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a U-DFN2020-6 package, which is suitable for low-profile applications. The series supports general-purpose interfacing and power management roles in electronic circuits.