DMN3052LSS-13

$0.34

Description：MOSFET N-CH 30V 7.1A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)

SKU:f8dbfe524b18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 7.1A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：555 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3052LSS-13

Overview

The DMN3052LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of 30V and an SO-8 surface-mount package. The device provides a maximum on-resistance of 30mΩ at VGS=10V, with a continuous drain current rating of 7.1A at +25°C. Key electrical parameters include a gate threshold voltage of 0.62V to 1.2V, input capacitance of 555pF, and total power dissipation of 2.5W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability requirements.
Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify component authenticity against the official datasheet specifications before integration. Confirm that the specific lot matches the required AEC-Q101 qualification status if used in automotive contexts. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual PCB copper pad layout conditions.

Selection Notes

This component is explicitly marked as not recommended for new designs. Engineers should select the DMN3025LSS as the designated replacement part within the same product family. Review the updated specifications of the successor device to ensure compatibility with existing circuit requirements and performance targets.

Part Context

The DMN3052LSS-13 belongs to the DMN series of single N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices utilize silicon technology and are housed in SO-8 packages. The product line focuses on balancing low conduction losses with fast switching capabilities for general-purpose power switching tasks.