DMN3053L-7

$0.36

Description：MOSFET N-CH 30V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4d46b66e2285 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：676 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：760mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3053L-7

Overview

The DMN3053L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 4.0A at +25°C. The static drain-source on-resistance (RDS(ON)) is 45mΩ at VGS=10V and 50mΩ at VGS=4.5V. Total gate charge (Qg) is 17.2nC at VGS=10V and 7.3nC at VGS=4.5V. Input capacitance (Ciss) is 676pF. Operating temperature range is -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load Switch
DC-DC Converters
Power management functions

Procurement Notes

Verify the specific ordering suffix matches your packaging requirements, as the datasheet lists both DMN3053L-7 (3000 units per tape and reel) and DMN3053L-13 (10000 units per tape and reel). Confirm that the component meets RoHS compliance and is halogen-free if required by your manufacturing specifications. Ensure the SOT23 footprint aligns with your PCB design guidelines.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(ON) is needed for compact designs. The SOT23 package suits space-constrained applications. Consider the thermal resistance values provided for different mounting conditions when designing heat dissipation strategies. Verify gate threshold voltage compatibility with your driving logic levels.

Part Context

This part belongs to the DMN3053L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where small form factor and reliable operation are critical.

Replacement Considerations

Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) before substituting. Ensure the replacement device supports the same SOT23 package and meets AEC-Q101 qualification if automotive use is required. Verify thermal characteristics match your application's cooling capabilities.