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Product Detailed Parameters
- Description：MOSFET 2N-CH 5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：458pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN3055LFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 surface-mount package with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGSS) of ±12V. The device provides a maximum continuous drain current (ID) of 5.0A at +25°C, reducing to 4.0A at +70°C. The static drain-source on-resistance (RDS(ON)) is specified as 40mΩ max at VGS=4.5V and 75mΩ max at VGS=2.5V. Total power dissipation reaches 1.36W at +25°C when mounted on an FR-4 substrate with a 1-inch square copper plate. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low on-state resistance combined with superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free "Green" device
Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The suffix indicates packaging quantity and type; ensure the selected variant matches the required reel specifications for automated assembly processes. Confirm compliance requirements such as RoHS status directly with the manufacturer's quality definitions.
Selection Notes
Select this component based on the 30V breakdown voltage and 5.0A continuous current rating suitable for low-voltage power paths. Evaluate thermal constraints carefully, as the U-DFN2020-6 package requires adequate copper area for optimal heat dissipation. Ensure gate drive voltages align with the RDS(ON) specifications at either 2.5V or 4.5V depending on system logic levels.
Part Context
This part belongs to the DMN3055LFDB series of dual N-channel MOSFETs. It utilizes the U-DFN2020-6 (Type B) case style, which offers a compact footprint for space-constrained designs. The device is optimized for minimizing conduction losses while maintaining fast switching characteristics in portable and battery-powered electronics.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same dual N-channel topology, 30V VDS rating, and compatible U-DFN2020-6 pinout to guarantee mechanical and electrical interchangeability without circuit redesign.
