DMN3055LFDBQ-13

$0.09

Description：MOSFET 2N-CH 30V 5A 6UDFN
Series：-

SKU:d7687298cbe8 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Rds On (Max) @ Id, Vgs：40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：458pF @ 15V
Power - Max：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：Automotive
Qualification：AEC-Q101

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DMN3055LFDBQ-13

Overview

The DMN3055LFDBQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a drain-source voltage (V_DSS) of 30 V, a continuous drain current (I_D) of 5.0 A at +25°C, and a maximum static drain-source on-resistance (R_DS(ON)) of 40 mΩ at V_GS = 4.5 V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact U-DFN2020-6 package
AEC-Q101 qualified with PPAP capability for automotive applications
Low on-resistance and low input capacitance for efficient switching
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the official datasheet. Confirm that the component meets the required IATF 16949 manufacturing facility standards for automotive change control requirements before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel MOSFET with a 30 V rating and high current handling capability is required. Ensure the application design accommodates the thermal resistance characteristics of the U-DFN2020-6 package. Verify that the gate drive voltage aligns with the specified R_DS(ON) performance thresholds for optimal efficiency.

Part Context

This part belongs to the DMN3055LFDBQ series from Diodes Incorporated. It is specifically engineered for automotive environments requiring strict quality controls. The 'DMN3055LFDBQ-13' designation indicates the standard dual N-channel variant packaged in a 10,000-unit reel format.