SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMN3055LFDBQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6 package and meets AEC-Q101 standards with PPAP capability. Key electrical parameters include a drain-source voltage (V_DSS) of 30V, a maximum continuous drain current (I_D) of 5.0A at +25°C, and a static drain-source on-resistance (R_DS(ON)) of 40mΩ at V_GS = 4.5V. The device operates within a temperature range of -55°C to +150°C.
Verify the component against the official Diodes Incorporated datasheet DS42694 Rev. 2-2. Confirm that the marking code matches the specified date code key and product type. Ensure the package corresponds to the U-DFN2020-6 (Type B) outline dimensions provided in the mechanical data section.
Select this component when designing circuits requiring dual N-channel MOSFETs with a 30V rating. Consider the 40mΩ R_DS(ON) at 4.5V gate drive for power loss calculations. Verify thermal management requirements based on the junction-to-ambient resistance values provided for different mounting conditions.
This part belongs to the DMN3055LFDBQ series from Diodes Incorporated. It is specifically engineered for high-reliability environments, distinguishing itself through its automotive qualification status. The dual configuration allows for compact designs in power management and conversion applications.
Check for exact pinout compatibility if substituting. Verify that alternative components meet the same AEC-Q101 qualification and PPAP requirements. Ensure the replacement supports the required 30V breakdown voltage and similar on-resistance characteristics.