DMN3055LFDBQ-7

DMN3055LFDBQ-7

$0.11
  • Description:MOSFET 2N-CH 30V 5A 6UDFN
  • Series:-

SKU:8659ef0eeafa Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 5A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:-
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:458pF @ 15V
  • Power - Max:810mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:U-DFN2020-6 (Type B)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN3055LFDBQ-7

Overview

The DMN3055LFDBQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6 package and meets AEC-Q101 standards with PPAP capability. Key electrical parameters include a drain-source voltage (V_DSS) of 30V, a maximum continuous drain current (I_D) of 5.0A at +25°C, and a static drain-source on-resistance (R_DS(ON)) of 40mΩ at V_GS = 4.5V. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP support for automotive use
  • Low on-resistance and low input capacitance for efficient switching
  • Fast switching speed combined with low input/output leakage currents
  • Manufactured in IATF 16949 certified facilities

Applications

  • Battery Charging systems
  • Power Management Functions
  • DC-DC Converters
  • Portable Power Adaptors

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS42694 Rev. 2-2. Confirm that the marking code matches the specified date code key and product type. Ensure the package corresponds to the U-DFN2020-6 (Type B) outline dimensions provided in the mechanical data section.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs with a 30V rating. Consider the 40mΩ R_DS(ON) at 4.5V gate drive for power loss calculations. Verify thermal management requirements based on the junction-to-ambient resistance values provided for different mounting conditions.

Part Context

This part belongs to the DMN3055LFDBQ series from Diodes Incorporated. It is specifically engineered for high-reliability environments, distinguishing itself through its automotive qualification status. The dual configuration allows for compact designs in power management and conversion applications.

Replacement Considerations

Check for exact pinout compatibility if substituting. Verify that alternative components meet the same AEC-Q101 qualification and PPAP requirements. Ensure the replacement supports the required 30V breakdown voltage and similar on-resistance characteristics.

DMN3055LFDBQ-7DMN3055LFDBQ-7
$0.11
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