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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.6A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMN3060LVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.6A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) of up to 1.8V, total gate charge (Qg) of 11.3nC at VGS=10V, and power dissipation of 0.83W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 package
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the datasheet. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status as defined by the manufacturer's green product guidelines. Ensure the supplier provides documentation confirming the authenticity of the Diodes Incorporated source.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small surface-mount package. The 30V rating and 3.6A current capability suit low-voltage applications. Consider the RDS(ON) values at specific gate voltages (10V vs 4.5V) to ensure compatibility with the driving circuitry. Verify thermal requirements against the 151°C/W junction-to-ambient resistance for the intended PCB layout.
Part Context
This part belongs to the DMN3060LVT series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but differs primarily in packaging and quantity. The 'VT' suffix typically denotes the specific pinout or internal configuration within the TSOT26 case, while '-13' indicates the standard 10k reel packaging.
Replacement Considerations
Direct substitutes may include other dual N-channel MOSFETs in TSOT26 packages with comparable 30V ratings and low RDS(ON). Verify pin compatibility and thermal performance before substitution. Check if alternative parts meet the same RoHS and green material requirements.
