DMN3061SQ-7

$0.06

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a3b5e6110d0a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：59mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：233 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3061SQ-7

Overview

The DMN3061SQ is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 30V and continuous drain currents ranging from 1.8A to 2.9A depending on thermal conditions. The device offers low on-resistance, specified as 59mΩ at VGS=10V and 98mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT23 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance for efficient power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

General-purpose interfacing switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) to confirm the required tape and reel quantity. Confirm that the application environment meets the AEC-Q101 qualification requirements. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet for the selected mounting configuration.

Selection Notes

Select this component when a 30V N-channel MOSFET with automotive qualification is required. Consider the gate threshold voltage and on-resistance values at specific gate drive voltages. Evaluate the thermal dissipation capabilities against the expected load current and ambient temperature conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series includes various packages and ratings tailored for different power and space constraints. The DMN3061SQ specifically targets automotive-grade reliability and performance.