DMN3061SVTQ-7

Overview

The DMN3061SVTQ is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a TSOT26 package with six pins and operates within a junction temperature range of -55°C to +150°C. The device supports a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±20V. At TA = +25°C, the continuous drain current (ID) reaches 3.4A at VGS=4.5V. The static drain-source on-resistance (RDS(on)) is specified as 60mΩ max at VGS=10V/ID=3.1A, and 100mΩ max at VGS=4.5V/ID=2A. Power dissipation is rated at 0.88W or 1.08W depending on mounting conditions.

Feature Summary

• Qualified to AEC-Q101 standards with PPAP capability for automotive use
• Low on-resistance and low input capacitance for efficient switching
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free green device

Applications

• Backlighting
• DC-DC converters
• Power management functions

Procurement Notes

Verify the specific ordering suffix when sourcing components. The suffix indicates the packing quantity and carrier type used by the manufacturer. Confirm that the received parts match the required electrical specifications and packaging format before integration into production lines.

Selection Notes

Select this component for circuits requiring a dual N-channel configuration in a compact surface-mount footprint. Ensure the design accounts for the thermal resistance values provided under different board mounting conditions. Verify that the gate drive voltage meets the requirements for the desired on-resistance performance level.

Part Context

This part belongs to the DMN3061 series manufactured by Diodes Incorporated. It is produced in IATF 16949 certified facilities to support stringent automotive quality requirements. The device utilizes a molded plastic package material classified as UL 94V-0 flammability rating.

Replacement Considerations

Check datasheets for other dual N-channel MOSFETs in the TSOT26 package. Verify that substitute parts meet the same BVDSS, ID, and RDS(on) specifications. Ensure the replacement component also satisfies AEC-Q101 qualification if the application requires it.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 20A, measured with a 10μs pulse duration and a duty cycle of 1%.

Is the device suitable for high-temperature environments?

Yes, the operating and storage temperature range extends from -55°C to +150°C.

What is the typical total gate charge at VGS=4.5V?

The typical total gate charge is 3.5nC when tested at VDS=15V, VGS=4.5V, and ID=3A.