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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：278 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3061SW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current of 2.7A at +25°C. The device exhibits a maximum on-resistance of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage up to 1.8V, total gate charge of 3.5nC, and input capacitance of 278pF. Thermal characteristics specify a junction-to-ambient resistance of 254°C/W with a power dissipation of 0.49W.
Feature Summary
- Designed for low on-state resistance while maintaining superior switching performance
- Utilizes totally lead-free and fully RoHS compliant manufacturing processes
- Constructed using halogen and antimony free green molding compound
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before procurement. Ensure compatibility with standard surface mount assembly processes and soldering profiles defined in relevant industry standards.
Selection Notes
Select this component for applications requiring efficient power management within a compact SOT323 footprint. Evaluate thermal constraints carefully due to the specified junction-to-ambient resistance values. Consider the gate threshold voltage range when designing drive circuits to ensure reliable switching across the full operating temperature range from -55°C to +150°C.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance for high-efficiency power management. The DMN3061SW variant specifically targets general-purpose switching and analog applications where low input capacitance and fast switching speeds are beneficial.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, voltage ratings, and package dimensions to ensure mechanical and electrical compatibility without modifying existing circuit designs.
