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Product Detailed Parameters
- Description：MOSFET N-CH 30V 4A SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：770mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3065LW-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4A at +25°C. The device offers low on-resistance, specified as 52mΩ at VGS=10V/ID=4A, 65mΩ at VGS=4.5V/ID=3A, and 85mΩ at VGS=2.5V/ID=2A. Key electrical parameters include a gate threshold voltage range of 0.5V to 1.5V, total gate charge of 11.7nC at VGS=10V, and input capacitance of 465pF. It operates within a temperature range of -55°C to +150°C with a power dissipation of 770mW in the SOT323 package.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed capabilities
- Low input capacitance and leakage currents
- Qualified to AEC-Q101 standards for high reliability
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
Procurement Notes
Verify the specific ordering suffix when purchasing. The DMN3065LW-7 designation indicates packaging in tape and reel format with a quantity of 3000 units per reel. Confirm that the component meets RoHS compliance requirements and ensure the supplier provides valid traceability documentation for the manufacturing date code and lot number prior to finalizing any acquisition.
Selection Notes
Select this component for applications requiring a compact single N-channel MOSFET with a 30V rating. The SOT323 package is suitable for space-constrained designs. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired on-resistance levels, particularly noting the performance differences between 10V, 4.5V, and 2.5V gate drive conditions for optimal efficiency.
Part Context
This part belongs to the DMN3065 series of N-channel enhancement mode field effect transistors from Diodes Incorporated. These devices are designed for general-purpose switching applications where low on-resistance and fast switching are critical. The series utilizes silicon technology and is housed in lead-free, halogen-free green packages compliant with environmental directives.
Replacement Considerations
Check datasheets for alternative parts offering compatible BVDSS, ID, and RDS(ON) values. Verify pinout compatibility with the SOT323 package to ensure direct replacement without PCB redesign. Confirm thermal resistance and power dissipation ratings match or exceed the original specifications.
