DMN3066L-7

$0.08

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e89ee53ba31a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：353 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3066L-7

Overview

The DMN3066L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 3.6A at +25°C. The device offers low on-state resistance, specified as 67mΩ max at VGS=4.5V and ID=2.5A. Packaged in a surface-mount SOT23 case, it is designed for high efficiency power management applications.

Feature Summary

Low gate threshold voltage
Fast switching speed
ESD protected gate

Applications

Load Switch

Procurement Notes

Verify the specific ordering suffix '-7' to confirm the 3,000-unit tape and reel packaging configuration. Ensure that the required operating temperature range and thermal dissipation characteristics align with the target application's FR-4 substrate mounting conditions before finalizing procurement.

Selection Notes

Select this component when a compact SOT23 package is required for low-voltage power switching. The device is suitable for designs needing fast switching performance combined with minimized on-state resistance. Verify that the system's gate drive voltage meets the minimum requirements for optimal RDS(ON) performance.

Part Context

This part belongs to the DMN3066L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology and is housed in a standard SOT23 surface-mount case.