DMN3066LQ-13

$0.06

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ec5a47a80bd5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：353 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3066LQ-13

Overview

The DMN3066LQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.6A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 67mΩ at VGS = 4.5V and 98mΩ at VGS = 2.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 0.81W in steady state. The component utilizes a SOT23 package.

Feature Summary

Low gate threshold voltage for efficient drive requirements
Fast switching speed capabilities
ESD protected gate structure

Applications

Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration. Confirm that the required automotive qualification standards, including AEC-Q101 compliance and PPAP capability, are necessary for the intended application environment before finalizing procurement.

Selection Notes

Select this component when a 30V N-channel MOSFET with low on-resistance is required for high-efficiency power management. Ensure the design accommodates the specified thermal resistance values and the 3.6A continuous current limit under steady-state conditions. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions.

Part Context

This part belongs to the DMN3066LQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high efficiency power management applications and includes variants with different packaging options.

Replacement Considerations

The datasheet does not list specific substitute part numbers. Evaluate alternative components based on matching electrical parameters such as BVDSS, ID, and RDS(ON), ensuring compatibility with the SOT23 package and thermal requirements.

FAQ

Is the DMN3066LQ suitable for automotive applications?

Yes, the DMN3066LQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.