DMN3066LVT-7

$0.10

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8e10dbbf6a7d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3066LVT-7

Overview

The DMN3066LVT-7 is an N-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage (BVDSS) of 30V and gate-source voltage (VGSS) of ±12V. Maximum on-resistance (RDS(ON)) is 67mΩ at VGS=4.5V, 70mΩ at VGS=4.0V, and 98mΩ at VGS=2.5V, with corresponding continuous drain currents of 3.6A, 3.5A, and 3.0A respectively. The device has a threshold voltage range of 0.5V to 1.5V. Input capacitance is typically 328pF, total gate charge is 4.0nC, and pulsed drain current reaches 21A. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input/output leakage
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The DMN3066LVT-7 indicates a tape and reel carrier with 3,000 units per reel. Confirm the package type is TSOT26 and ensure compliance with RoHS 3 and halogen-free requirements if specified by the design. Check for automotive qualification needs separately as standard parts may not meet AEC-Q101 standards without explicit confirmation.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(ON) at reduced gate voltages is required. The device supports operation down to 2.5V gate drive, offering flexibility in logic-level control applications. Ensure thermal management accounts for the junction-to-ambient resistance of 129°C/W on minimal copper layouts or 93°C/W on larger copper planes. Verify that the 3.6A continuous current rating meets the load requirements under expected ambient temperatures.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is housed in a compact TSOT26 package made of molded plastic with matte tin annealed terminals over a copper leadframe. The device is moisture sensitivity level 1 and rated for UL flammability classification 94V-0.