DMN3066LVTQ-7

$0.11

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0b53c37a8568 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3066LVTQ-7

Overview

The DMN3066LVTQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and an on-resistance (RDS(ON)) of 67mΩ at VGS = 4.5V, supporting a continuous drain current (ID) of 3.6A at +25°C. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 0.9W in steady state. Packaged in a TSOT26-6 surface-mount configuration, it includes an ESD-protected gate and meets AEC-Q101 automotive standards.

Feature Summary

Designed for automotive applications with AEC-Q101 qualification and PPAP capability.
Features low input capacitance and fast switching speed for high efficiency.
Includes an ESD protected gate structure for enhanced reliability.
Manufactured using lead-free, halogen-free, and antimony-free green materials.

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel carrier format. Confirm that the component meets IATF 16949 manufacturing requirements if strict automotive change control protocols are necessary for your supply chain. Ensure compatibility with RoHS 2 and RoHS 3 directives based on final procurement specifications.

Selection Notes

Select this component when a 30V N-channel MOSFET with optimized low on-resistance is required for space-constrained designs. The TSOT26 package provides a compact footprint suitable for dense PCB layouts. Consider the thermal resistance characteristics and power dissipation limits relative to the expected ambient operating conditions and duty cycles of the target application.

Part Context

This part belongs to the DMN3066LVTQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to address the stringent reliability and performance demands of modern automotive electronics. The series utilizes advanced silicon technology to minimize conduction losses while maintaining robust switching capabilities.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters such as BVDSS, RDS(ON), ID, and package dimensions to ensure functional equivalence without compromising system safety or performance.

FAQ

Is the DMN3066LVTQ-7 qualified for automotive use?

Yes, the DMN3066LVTQ is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.