DMN3067LW-13

$0.36

Description：MOSFET N-CH 30V 2.6A SOT-323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2b5ac6d0aefb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN3067LW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 2.6A SOT-323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN3067LW-13

Description：MOSFET N-CH 30V 2.6A SOT-323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：447 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN3067LW-13

DMN3067LW-13

Single FETs, MOSFETs Overview

The DMN3067LW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of 30V and a continuous drain current of 2.6A at +25°C. The device offers low on-state resistance, specified as 67mΩ at VGS=4.5V and 98mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 1.5V maximum, total gate charge of 4.6nC, and input capacitance of 447pF. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-323 package.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards

Single FETs, MOSFETs Applications

Switching applications
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36640 Rev. 4-2. Confirm the part number suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Ensure compliance with RoHS and halogen-free requirements as defined by the manufacturer's green product specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact surface-mount solution with low conduction losses. The SOT-323 package suits space-constrained layouts. Verify that the required gate drive voltage aligns with the specified RDS(ON) performance curves to ensure optimal efficiency during operation.

Single FETs, MOSFETs Part Context

This part belongs to the DMN3067LW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The series is intended for general-purpose power management and switching tasks.