DMN3069L-13

$0.05

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0a75ddedad53 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：309 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3069L-13

Overview

The DMN3069L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage rating of ±20V. The device offers a low static drain-source on-resistance (RDS(ON)) of 30mΩ at VGS=10V and 40mΩ at VGS=4.5V, supporting continuous drain currents up to 5.3A at 25°C. Key electrical parameters include a gate threshold voltage range of 1.0V to 1.8V, total gate charge of 8.1nC at VGS=10V, and input capacitance of 309pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 158.8°C/W and an operating temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input/output leakage
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements when sourcing. Confirm that the component meets the required automotive or industrial standards if applicable, as standard versions may differ from AEC-Q101 qualified parts.

Selection Notes

Select this component for applications requiring low conduction losses in compact SOT23 packages. Evaluate the RDS(ON) performance at the intended gate drive voltage, noting the increase at lower VGS levels. Consider the thermal resistance and power dissipation limits relative to the PCB copper area and ambient conditions to ensure safe operation within the specified junction temperature range.

Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose switching applications. The 'DMN' prefix indicates a silicon-based N-channel enhancement mode transistor. The '-13' suffix typically denotes tape and reel packaging with a quantity of 10,000 units per reel, distinguishing it from other packaging options like the '-7' variant.