DMN3070SSN-7

$0.33

Description：MOSFET N-CH 30V 4.2A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:717e4fc2e202 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4.2A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：780mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3070SSN-7

Overview

The DMN3070SSN-7 is a 30V N-channel enhancement mode MOSFET in an SC59 surface-mount package. It features a maximum drain-source voltage of 30V and continuous drain currents up to 5.1A at +25°C (VGS=10V) or 4.3A (VGS=4.5V). The device exhibits low on-resistance, rated at a maximum of 40mΩ at VGS=10V and 50mΩ at VGS=4.5V. Total gate charge is 13.2nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by Diodes Incorporated. Ensure the SC59 package dimensions align with the target PCB footprint layout before finalizing procurement.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. Verify that the 30V breakdown voltage and current ratings meet the circuit's operational demands. Consider the thermal characteristics and junction-to-ambient resistance for adequate heat dissipation in the intended application environment.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in the SC59 case outline. The product is designed to minimize on-state resistance while maintaining superior switching performance for modern electronic systems.