DMN3071LFR4-7

$0.34

Description：MOSFET N-CH 30V 3.4A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a5421ba49a9a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.4A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-3
Package / Case：3-XFDFN

Download product information

DMN3071LFR4-7

Overview

The DMN3071LFR4 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.4A at +25°C. The device offers low on-state resistance, rated at 65mΩ at VGS=10V and 75mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN1010-3 package.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
Fast switching speed capabilities support efficient operation in high-frequency applications.
Totally lead-free and fully RoHS compliant construction with halogen and antimony-free green materials.

Applications

Power-management functions
Backlighting circuits
Load switches

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and tape width specifications. Ensure compliance with applicable environmental directives such as RoHS 2 and RoHS 3 requirements before procurement. Confirm that the selected component meets all necessary automotive or industrial qualification standards if required by the final application environment.

Selection Notes

Select this component based on its 30V rating and low RDS(ON) characteristics suitable for compact power designs. Evaluate thermal performance using the provided junction-to-ambient resistance values for the target PCB layout. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on under varying load conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low static resistance with dynamic switching efficiency. The series targets modern electronic systems requiring small form factors and high reliability in power distribution tasks.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.