DMN30H14DLY-13

$0.23

Description：MOSFET N-CH 300V 210MA SOT89
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e544b61c5649 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 210MA SOT89
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：96 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-89-3
Package / Case：TO-243AA

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DMN30H14DLY-13

Overview

The DMN30H14DLY-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 300V and a continuous drain current (ID) of 0.21A at +25°C. The device offers a maximum on-state resistance (RDS(ON)) of 14Ω at VGS = 10V and 20Ω at VGS = 4.5V. Packaged in SOT89, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
Features low gate threshold voltage and low input capacitance for fast switching speed.
Totally lead-free and fully RoHS compliant, halogen and antimony free.

Applications

Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the component against the official datasheet DS36812 Rev. 3. Confirm that the package type matches the required SOT89 footprint. Ensure the ordering suffix corresponds to the specified packing quantity and carrier type. Check for any specific automotive qualification requirements if applicable to the design.

Selection Notes

Select this component for designs requiring a 300V N-channel MOSFET in a compact SOT89 package. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate threshold voltage characteristics to ensure compatibility with the intended drive circuitry levels.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT89 package with matte tin finish terminals. The product is classified as a 'Green' device due to its compliance with environmental directives.

Replacement Considerations

The datasheet explicitly states that the DMN30H14DLY is not recommended for new designs. Customers are advised to contact Diodes Incorporated or their local representative for alternative solutions suitable for modern applications.