DMN30H4D0L-13

$0.52

Description：MOSFET N-CH 300V 250MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4083b6de9c12 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 250MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：187.3 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN30H4D0L-13

Overview

The DMN30H4D0L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V(BR)DSS) of 300 V and a continuous drain current (ID) of 0.25 A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 4 Ω maximum at VGS = 10V with ID = 0.3A, and 4 Ω maximum at VGS = 4.5V with ID = 0.2A. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability in automotive or demanding environments.
Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free.

Applications

DC-DC Converters
Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and AEC-Q101 qualifications, prior to integration into final designs.

Selection Notes

Select this component for applications requiring a 300V breakdown voltage in a compact SOT23 package. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at 10V or 4.5V. Evaluate thermal dissipation capabilities based on the junction-to-ambient thermal resistance provided in the datasheet.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a surface-mount SOT23 case configuration designed for automated assembly. The device is intended for general-purpose switching and power management tasks where space constraints are critical.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters such as V(BR)DSS, RDS(ON), and package dimensions against the original specification sheet.