DMN30H4D0L-7

$0.71

Description：MOSFET N-CH 300V 250MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ad17394c7595 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 250MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：187.3 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN30H4D0L-7

Overview

The DMN30H4D0L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 300V and a continuous drain current of 0.25A at +25°C. The device exhibits a maximum on-resistance of 4Ω at VGS=10V and 4.5V, with a gate threshold voltage ranging from 1V to 3V. Packaged in an SOT-23 case, it supports a junction temperature range of -55°C to +150°C and includes an internal body diode.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Qualified to AEC-Q101 standards ensuring high reliability for automotive environments.
Totally lead-free and fully RoHS compliant, containing no intentionally added lead.
Halogen and antimony free construction designated as a 'Green' device.

Applications

DC-DC Converters
Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The DMN30H4D0L-7 variant utilizes a tape and reel format with a quantity of 3,000 units per reel. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, prior to integration into final assemblies.

Selection Notes

Select this component for circuits requiring a 300V blocking capability within a compact surface-mount footprint. The low gate threshold voltage facilitates drive compatibility with standard logic levels. Ensure thermal management strategies account for the specified power dissipation limits when operating near maximum ratings or elevated ambient temperatures.

Part Context

This part belongs to the DMN30H4D0L series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to balance low on-state resistance with superior switching performance. The product line targets modern electronic designs where space constraints and energy efficiency are critical design parameters.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching key electrical parameters such as the 300V drain-source voltage rating and the specific package dimensions of the SOT-23 form factor.