DMN30H4D0LFDE-13

$0.52

Description：MOSFET N-CH 300V 550MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e018658d0231 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 550MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：187.3 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：630mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMN30H4D0LFDE-13

Overview

The DMN30H4D0LFDE-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 300V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 0.55A at 25°C, with a maximum static drain-source on-resistance of 4Ω at VGS=10V and 6Ω at VGS=2.7V. Packaged in a U-DFN2020-6 case, it exhibits low input capacitance of 187.3pF and total gate charge of 7.6nC.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features a 0.6mm profile ideal for low profile applications and qualified to AEC-Q101 standards for high reliability.
Totally lead-free and fully RoHS compliant, containing no purposely added lead, halogens, or antimony.

Applications

Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and compliance status. Confirm that the component meets all required environmental standards, including RoHS and REACH directives, before finalizing procurement specifications.

Selection Notes

Select this component when a 300V rating is required in a compact U-DFN2020-6 package. Ensure the application can accommodate the specified on-resistance values at the intended gate drive voltages. Verify thermal requirements against the provided junction-to-ambient resistance data.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 surface mount package. The device is designed to offer a balance between low conduction losses and fast switching capabilities.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not substitute based solely on pin compatibility without verifying electrical parameters and package dimensions.