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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.2A 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：69mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.52 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.38W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMN3110LCP3-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 3.2 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 54 mΩ. It is housed in an X2-DFN1006-3 surface-mount package with dimensions of 1.0 mm x 0.6 mm x 0.45 mm. The component supports a maximum power dissipation of 1.38 W and operates within a junction temperature range from -55°C to +150°C.
Feature Summary
- High-performance N-channel enhancement mode operation for efficient switching
- Low on-resistance design to minimize conduction losses
- Compact X2-DFN1006-3 package optimized for space-constrained PCB layouts
Applications
- Portable consumer electronics requiring compact power management
- Battery-powered devices needing efficient DC-DC conversion
- General-purpose low-voltage switching applications
Procurement Notes
Verify the specific suffix and marking codes against the official Diodes Incorporated datasheet to ensure authenticity. Confirm that the received components match the X2-DFN1006-3 package dimensions and pin configuration. Check for any manufacturer notices regarding lead-free compliance or RoHS status prior to integration into production assemblies.
Selection Notes
Select this component when a 30 V rating and approximately 3.2 A current capacity are required in a minimal footprint. The low Rds(on) makes it suitable for applications prioritizing efficiency over high-current handling. Ensure the thermal design accounts for the 1.38 W dissipation limit in the specified small outline package.
Part Context
This part belongs to the DMN31 series of single N-channel MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching tasks where size and cost-efficiency are critical. The series typically targets mobile and portable markets, offering a balance between electrical performance and physical compactness compared to larger standard packages.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on similar voltage or current ratings without confirming pinout compatibility and thermal characteristics.
