DMN3110S-7

$0.47

Description：MOSFET N-CH 30V 2.5A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a29e23b5105e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 2.5A SOT-23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：73mOhm @ 3.1mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：305.8 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3110S-7

Overview

The DMN3110S-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 3.3A at +25°C. The device exhibits a low on-state resistance of 73mΩ at VGS=10V and 110mΩ at VGS=4.5V. Operating within a temperature range of -55°C to +150°C, it utilizes a SOT-23 package with a total power dissipation of 0.74W. Key dynamic characteristics include a gate charge of 8.6nC and fast switching speeds.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green device construction.

Applications

General purpose interfacing switch
Power management functions
Boost application
Analog switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of intentionally added lead, halogens, and antimony. Ensure the selected part aligns with the manufacturer's standard terms and conditions regarding liability and warranty coverage.

Selection Notes

Select this component based on its 30V drain-source voltage rating and 3.3A continuous current capability. Evaluate the on-resistance requirements against the available drive voltages of 10V or 4.5V. Consider the thermal resistance values and operating temperature limits when designing for specific ambient conditions. Verify compatibility with the SOT-23 footprint and recommended pad layout dimensions.

Part Context

This component belongs to the DMN31 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide low on-resistance and fast switching capabilities suitable for compact power management circuits. The device is housed in a SOT-23 case constructed from molded plastic with matte tin annealed terminals over a copper lead-frame.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with a Q-suffix. These alternatives are qualified to AEC-Q100/101/200 standards and are manufactured in IATF 16949 certified facilities.