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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.2A SOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：60mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：476 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
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Overview
The DMN3115UDM-7 is an N-channel Power MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 3.2 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 60 mΩ when driven at 4.5 V with a drain current of 3.2 A, or 90 mΩ at 10 V. It operates within a junction temperature range of -55°C to 150°C and is housed in a surface-mount SOT-26 package.
Feature Summary
- Dual N-channel configuration integrated into a single compact package for space-constrained designs
- Low on-resistance characteristics optimized for efficient power switching applications
- Robust thermal performance supporting operation up to 150°C junction temperature
Applications
- DC-DC converter circuits requiring low profile packaging
- Load switch implementations in portable electronic devices
- Power management modules in consumer electronics
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance status aligns with project environmental regulations. Ensure the SOT-26 footprint matches the PCB design constraints. Check datasheet revisions for any updates to electrical limits before finalizing procurement specifications.
Selection Notes
Select this component where dual independent N-channel control is needed in minimal board area. Compare Rds(on) values against system efficiency requirements at intended drive voltages. Evaluate thermal dissipation capabilities relative to ambient conditions and heat sinking options. Verify gate threshold voltage compatibility with available logic levels.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. These components are designed to replace discrete transistor pairs, reducing assembly complexity. The SOT-26 package provides a small outline solution suitable for high-density printed circuit board layouts in modern electronic equipment.
Replacement Considerations
Cross-reference with other DMN series parts from Diodes Incorporated for pin-compatible alternatives. Verify that substitute components maintain identical Vdss, Id, and Rds(on) specifications. Ensure replacement packages match the existing SOT-26 footprint without mechanical interference.
