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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.5A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：305pF @ 15V
- Power - Max：840mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN3135LVT-7 is a dual N-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage (V(BR)DSS) of 30V and gate-source voltage (VGSS) of ±20V. At VGS=10V, the static on-resistance (RDS(on)) is typically 35mΩ with a continuous drain current (ID) of 3.5A. At VGS=4.5V, RDS(on) is typically 54mΩ with an ID of 2.8A. The device has a total power dissipation of 0.84W at 25°C, operating temperatures from -55°C to +150°C, and a thermal resistance (junction-to-ambient) of 155°C/W.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-state resistance to minimize conduction losses
- Fast switching speed and low input capacitance for high efficiency
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS35408 Rev. 6. Confirm the marking code '31D' matches the specific batch. Ensure the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Evaluate the 30V breakdown rating and the specific RDS(on) requirements at your target gate drive voltage (4.5V or 10V). Consider the TSOT26 package dimensions and thermal characteristics for your PCB layout.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It shares the TSOT26 form factor with other devices in the family but offers distinct electrical parameters optimized for general-purpose power management and switching applications.
Replacement Considerations
Check for direct replacements within the DMN series that share the TSOT26 package and similar 30V ratings. Verify pinout compatibility and ensure the alternative device meets the required RDS(on) and current handling specifications.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 25A, based on a 10μs pulse duration and a 1% duty cycle.
Is the device RoHS compliant?
Yes, the DMN3135LVT-7 is totally lead-free, fully RoHS compliant, and halogen and antimony free.
What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(th)) is 1.8V, with a range of 1.3V to 2.2V under specified test conditions.
