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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.5A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：305pF @ 15V
- Power - Max：840mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3135LVTQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a drain-source voltage (BVDSS) of 30V, a maximum continuous drain current (ID) of 3.5A at VGS=10V, and a static drain-source on-resistance (RDS(ON)) of 60mΩ at VGS=10V or 100mΩ at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration with low on-resistance for efficient power management
- Automotive-grade reliability with AEC-Q101 qualification and PPAP capability
- Fast switching speed supported by low input capacitance and gate charge
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify component authenticity through authorized channels. Confirm the specific ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet notes. Validate that the intended application environment falls within the rated thermal and electrical limits defined by the manufacturer.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs in a compact TSOT26 footprint. Consider the RDS(ON) values at both 10V and 4.5V gate drive voltages when designing driver circuits. Verify that the 30V breakdown voltage and 3.5A current rating align with the system's peak operational demands and thermal dissipation capabilities.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It is designed for automotive applications requiring specific change control and is manufactured in IATF 16949 certified facilities. The device utilizes a molded plastic package with matte tin annealed terminals over a copper leadframe.
Replacement Considerations
The datasheet explicitly states that the DMN3135LVTQ is not recommended for new designs. Engineers should consider using the DMN3061SVTQ as the designated replacement part for new projects.
