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Product Detailed Parameters
- Description：MOSFET N-CH 30V 270MA SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36.3 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN313DLT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 270mA at TA = +25°C with VGS = 4.0V, and a maximum static drain-source on-resistance (RDS(ON)) of 2Ω under the same conditions. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power-management applications with minimized on-state resistance.
- Features low input capacitance and fast switching speed for improved performance.
- Includes internal ESD protection rated up to 2kV.
- Compliant with RoHS standards and free from halogen and antimony.
Applications
- Backlighting
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packaging configuration containing 3000 units per carrier. Confirm that the component meets the required environmental specifications, including compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment does not exceed the specified thermal limits or voltage ratings defined in the datasheet.
Selection Notes
Select this component when a compact SOT523 package is required for low-voltage switching applications. The 30V BVDSS rating suits systems operating below this threshold. Consider the RDS(ON) values at both 4V and 2.5V gate drive voltages to ensure compatibility with the control logic levels available in the target circuit design.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic SOT523 package with matte tin annealed terminals over an Alloy 42 leadframe. The device is classified as a 'Green' product, indicating it is halogen and antimony-free.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. These alternatives are qualified to AEC-Q100/101/104/200 standards and are PPAP capable.
