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Product Detailed Parameters
- Description：MOSFET N-CH 28V 3.8A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：28 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：305 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3150L-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30 V and a continuous drain current of 3.8 A at +25°C. The device offers low on-resistance, specified as less than 54 mΩ at VGS = 10V and 72 mΩ at VGS = 4.5V. It operates within a temperature range of -55 to +150 °C and has a total power dissipation rating of 1.4 W. The component is housed in a SOT-23 package.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant
Applications
- Automotive applications requiring high reliability
- Power management circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental standards, specifically ensuring it is halogen and antimony free. Check the date code markings on the physical components to ensure they align with the manufacturer's coding system for assembly and test sites.
Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required for space-constrained designs utilizing the SOT-23 package. Consider its AEC-Q101 qualification if the application demands automotive-grade reliability. Evaluate the gate threshold voltage and total gate charge parameters to ensure compatibility with the intended drive circuitry and switching frequency requirements.
Part Context
This part belongs to the DMN3150 series of N-channel enhancement mode field effect transistors from Diodes Incorporated. The series is designed for general-purpose switching and amplification applications. The DMN3150L variant specifically targets markets requiring robust performance in compact form factors, leveraging the efficiency of the SOT-23 case material and molding compound.
Replacement Considerations
Direct substitutes must match the 30 V drain-source voltage, 3.8 A continuous drain current, and SOT-23 package dimensions. Verify that any alternative component maintains comparable on-resistance values at similar gate-source voltages and adheres to the same thermal resistance characteristics.
