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Product Detailed Parameters
- Description：MOSFET N-CH 30V 500MA SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN31D5L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.5A at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 1.5Ω at VGS = 4.0V and 2.0Ω at VGS = 2.5V. Packaged in an SOT23 case, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 350mW.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Motor control circuits
- Power management functions
- Backlighting applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives including RoHS 2, RoHS 3, and halogen/antimony-free requirements before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a compact single N-channel switch with a 30V rating. Ensure the gate drive voltage provides sufficient overdrive to achieve the specified low on-resistance values. Verify thermal constraints against the 357°C/W junction-to-ambient resistance for steady-state operation on standard FR-4 substrates.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a silicon technology process housed in a standard SOT23 surface-mount package. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for portable and battery-powered electronics.
Replacement Considerations
Cross-reference with other Diodes Incorporated parts such as the DMN31D5L-7 for identical electrical characteristics but different packaging quantities. Evaluate alternative single N-channel MOSFETs in SOT23 packages only if they match the 30V BVDSS and 0.5A ID ratings.
