DMN31D5UDAQ-7B

Overview

The DMN31D5UDAQ-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±12 V. The device operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a typical static drain-source on-resistance (RDS(ON)) of 1.2 Ω at VGS = 4.5 V, with a maximum continuous drain current (ID) of 0.4 A at TA = +25 °C. Total gate charge (Qg) is typically 0.38 nC, and the package type is X2-DFN0806-6.

Feature Summary

• Dual N-channel configuration integrated into an ultra-small surface mount package measuring 0.8mm x 0.6mm.
• Designed for low on-state resistance while maintaining fast switching speeds and low input capacitance.
• Includes ESD protected gates and utilizes totally lead-free, fully RoHS compliant materials.
• Suitable for automotive applications requiring specific change control, meeting AEC-Q101 qualification standards.

Applications

• General purpose interfacing switch
• Power management functions
• Analog switch

Procurement Notes

Verify that the ordering suffix matches the required packaging quantity, as the standard reel contains 10,000 units. Confirm compliance requirements such as AEC-Q101 qualification and IATF 16949 manufacturing certification if the application demands automotive-grade specifications. Ensure the component meets halogen-free and antimony-free definitions for green device compliance.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage signal routing or power management. The low gate threshold voltage allows compatibility with various logic levels, while the small footprint supports high-density PCB layouts. Evaluate thermal constraints carefully, as the total power dissipation is limited to 0.37 W in steady state.

Part Context

This part belongs to the DMN31D5UDAQ family of dual N-channel MOSFETs from Diodes Incorporated. It shares core electrical characteristics with other variants in the series but differs in packaging and qualification status. The 'Q' suffix indicates AEC-Q101 qualification for automotive use, distinguishing it from standard commercial grade parts.

Replacement Considerations

Direct replacements must match the X2-DFN0806-6 package and provide equivalent 30 V breakdown voltage. Verify that alternative components meet the same RDS(ON) limits and gate charge specifications to ensure identical switching performance in existing circuit designs.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 0.4 A at an ambient temperature of +25 °C, decreasing to 0.32 A at +70 °C.

Is this component qualified for automotive applications?

Yes, the DMN31D5UDAQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What is the typical turn-on rise time?

The typical turn-on rise time is 2.2 ns under test conditions of VDD = 15 V, VGS = 4.5 V, RG = 2 Ω, and ID = 200 mA.