DMN31D5UDR4-7

$0.03

Description：MOSFET 2N-CH 30V 0.5A 6DFN
Series：-

SKU:aa7be96bce56 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.5A 6DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：22.2pF @ 15V
Power - Max：370mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：X2-DFN1010-6 (Type UXC)
Grade：-
Qualification：-

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DMN31D5UDR4-7

Overview

The DMN31D5UDR4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN1010-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 500 mA. Key electrical characteristics include a maximum on-resistance of 4.5 Ohms, a gate-source voltage range of ±12 V, and a threshold voltage of 400 mV. The component operates within a temperature range of -55°C to +150°C with a power dissipation rating of 370 mW.

Feature Summary

Dual N-channel configuration for space-efficient circuit design
Enhancement mode operation with low threshold voltage
Silicon-based construction for reliable performance

Applications

General-purpose switching applications
Low-voltage signal routing
Battery protection circuits

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Diodes Incorporated documentation to ensure correct component specifications. Confirm RoHS compliance status and packaging details directly with authorized distributors or the manufacturer before procurement. Cross-reference datasheet parameters to validate suitability for the intended application environment.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a compact X2-DFN1010-6 package. Ensure the application demands a 30 V breakdown voltage and approximately 500 mA current handling capability. Verify that the thermal management requirements align with the 370 mW power dissipation limit and that the operating temperature range meets system constraints.

Part Context

This component belongs to the DMN31 series of dual N-channel MOSFETs from Diodes Incorporated. These devices are designed for portable electronics and general-purpose switching tasks where board space is limited. The series offers various package options, including DFN configurations, to accommodate different layout and thermal requirements across consumer and industrial products.