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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.43A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：15.4pF @ 15V
- Power - Max：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN31D5UDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage rating of ±12V. The device offers low on-state resistance, with RDS(ON) values ranging from 1.5Ω at VGS=4.5V to 4.5Ω at VGS=1.5V. Continuous drain current capabilities vary based on gate drive conditions, reaching up to 0.43A at VGS=4.5V. Packaged in an ultra-small SOT363 surface-mount format, it supports operating temperatures from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single ultra-small surface-mount package
- Optimized for high-efficiency power management through minimized on-state resistance
- Fast switching speed combined with low input capacitance and leakage currents
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Battery-operated systems
- Solid-state relays
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives, including RoHS and REACH requirements, before finalizing procurement specifications.
Selection Notes
Select this component when space constraints require a dual N-channel MOSFET in a compact SOT363 footprint. Ensure the application's gate drive voltage aligns with the required RDS(ON) performance levels. Verify thermal dissipation requirements against the junction-to-ambient thermal resistance characteristics provided in the datasheet.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing superior switching performance alongside low on-state resistance for efficient power management solutions.
Replacement Considerations
Consult the official Diodes Incorporated catalog for direct replacements or alternative packages within the same product family. Cross-compatibility should be verified against pinout configurations and electrical ratings rather than assuming interchangeability.
FAQ
What is the maximum continuous drain current for the DMN31D5UDW?
The maximum continuous drain current is 0.43A at VGS = 4.5V and TA = +25°C.
Does the DMN31D5UDW include internal protection features?
Yes, the device includes gate protection diodes and is ESD protected.
What is the typical total gate charge (Qg) for this MOSFET?
The typical total gate charge is 0.3nC at VGS = 4.5V and VDS = 15V.
