DMN31D5UFA-7B

Overview

The DMN31D5UFA-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a gate-source voltage (V_GSS) rating of ±12 V. The device operates within a temperature range of -55 °C to +150 °C. At V_GS = 4.5 V, the maximum on-resistance (R_DS(ON)) is 1.5 Ω with a continuous drain current (I_D) of 0.4 A. Lower gate voltages result in higher resistance and reduced current capacity: at V_GS = 2.5 V, R_DS(ON) is 2.0 Ω (I_D = 0.35 A); at V_GS = 1.8 V, it is 3.0 Ω (I_D = 0.3 A); and at V_GS = 1.5 V, it reaches 4.5 Ω (I_D = 0.23 A).

Feature Summary

• Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
• Features a low package profile with a maximum height of 0.4 mm and a footprint of 0.48 mm², which is significantly smaller than standard SOT23 packages.
• Includes ESD protection on the gate terminal and utilizes a totally lead-free, fully RoHS compliant construction that is also halogen and antimony free.

Applications

• General purpose interfacing switches
• Power management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as datasheets may list variations such as tape and reel quantities. Ensure compliance requirements match project needs, specifically checking for RoHS 2/3 directives and Halogen/Antimony-free status. Confirm the X2-DFN0806-3 package dimensions and recommended pad layout are compatible with the target PCB design before finalizing procurement.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than traditional SOT23 packages. It is suitable for applications requiring low on-resistance at varying gate drive voltages, including 1.5 V to 4.5 V ranges. Consider the thermal characteristics and maximum power dissipation limits when designing for high ambient temperatures or continuous operation conditions.

Part Context

This part belongs to the DMN31D5UFA series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is packaged in an X2-DFN0806-3 format, providing a compact solution for surface-mount assembly. The device is designed to offer a balance between low conduction losses and fast switching speeds, making it appropriate for modern portable and battery-powered electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

FAQ

What is the maximum gate threshold voltage for the DMN31D5UFA?

The maximum gate threshold voltage (V_GS(TH)) is 1.0 V, measured at V_DS = V_GS and I_D = 250 μA.

How does the on-resistance change with junction temperature?

The on-resistance increases as the junction temperature rises. Graphical data indicates variation across the operating range from -55 °C to +150 °C, with higher temperatures resulting in increased R_DS(ON).

Is the internal body diode characterized in the specifications?

Yes, the forward voltage (V_SD) of the body diode is specified, ranging from a typical 0.6 V to a maximum of 1.0 V at a source current of 10 mA.