DMN32D4SDW-7

$0.31

Description：MOSFET 2N-CH 30V 0.65A SOT363
Series：-

SKU:d18a837aa898 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.65A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：650mA
Rds On (Max) @ Id, Vgs：400mOhm @ 250mA, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
Power - Max：290mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN32D4SDW-7

Overview

The DMN32D4SDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 0.65A at 25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS=10V and 0.7Ω at VGS=4.5V. Total gate charge (Qg) reaches 1.3nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT363 surface-mount package.

Feature Summary

Dual N-channel configuration in a compact SOT363 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

Motor Control
Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a standard tape and reel packaging format containing 3,000 units per reel. Confirm that the component meets RoHS compliance requirements and lead-free specifications as defined by the manufacturer's quality standards.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with a 30V breakdown voltage. Ensure the design accommodates the 0.65A continuous drain current limit and the thermal constraints associated with the SOT363 package. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions for optimal performance.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications where space-saving surface mount packages are required.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, verify that the replacement matches the 30V V(BR)DSS, 0.65A ID, and SOT363 package dimensions. Ensure the alternative maintains comparable RDS(ON) values and gate charge characteristics for circuit compatibility.