DMN32M6LCA8-7

Overview

The DMN32M6LCA8-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes a CSP package with dimensions of 6mm x 2.5mm and a typical height of 0.18mm. The device features a source-source breakdown voltage (BVSSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. At TA = +25°C, the static source-source on-resistance (RSS(ON)) is typically 2.0mΩ at VGS = 10V, supporting a continuous source current of 30A. The total gate charge (Qg) is typically 42.7nC at VSS = 15V and IS = 10A. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Low profile CSP footprint measuring 6mm x 2.5mm with a typical height of 0.18mm
• Integrated ESD protection for the gate terminal
• Totally lead-free and fully RoHS compliant construction
• Halogen and antimony free green device configuration

Applications

• Battery management systems
• Load switches
• Battery protections

Procurement Notes

Verify the complete part number includes the '-7' suffix to confirm tape and reel packaging containing 3000 units per carrier. Confirm that the X4-DSN6025-8 package matches the required PCB pad layout specifications provided in the datasheet. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component when low profile constraints are critical due to its 0.18mm typical height. Evaluate thermal performance based on the specific copper area available on the FR-4 substrate, as power dissipation varies significantly between minimum recommended pads and larger heatsinking areas. Verify that the 30V breakdown voltage aligns with the maximum circuit operating conditions.

Part Context

This device belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It targets high-efficiency power-management applications where space-saving surface mount packages are required. The X4-DSN6025-8 package provides multiple source and drain connections to reduce effective resistance.

Replacement Considerations

No official substitute part numbers are documented in the manufacturer datasheet. When evaluating alternatives, ensure the replacement maintains the 6mm x 2.5mm footprint, 30V breakdown voltage, and compatible gate threshold characteristics. Verify that any cross-reference device supports the same ESD protection levels and RoHS compliance standards.

FAQ

What is the typical height of the DMN32M6LCA8-7 package?

The typical height of the X4-DSN6025-8 package is 0.18mm.

How does the continuous source current change with temperature?

At TA = +25°C, the continuous source current is 30A at VGS = 10V. At TA = +70°C, it decreases to 24A under the same conditions.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly or their local representative.