DMN3300UQ-7

$0.39

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:09d14ca8f160 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：150mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：193 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3300UQ-7

Overview

The DMN3300UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 2 A at +25°C. The device offers low on-state resistance, specified as 150 mΩ maximum at V_GS = 4.5 V with I_D = 4.5 A, and 200 mΩ maximum at V_GS = 2.5 V with I_D = 3.5 A. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in a surface-mount SOT-23 package.

Feature Summary

AEC-Q101 qualified for automotive applications requiring specific change control
Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant
Halogen- and antimony-free green device

Applications

DC-DC converters
Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the complete part number including the suffix '-7' to confirm tape and reel packaging containing 3,000 units per reel. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Confirm compliance with RoHS 3 and REACH directives based on the manufacturing date code. Validate that the SOT-23 footprint matches the PCB layout specifications provided in the datasheet.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-resistance and fast switching speeds. Consider the 30 V drain-source voltage rating and 2 A continuous current capability for load requirements. Evaluate thermal performance using the specified thermal resistance values for the intended operating environment. Verify gate threshold voltage compatibility with the driving circuit logic levels.

Part Context

This component belongs to the DMN3300 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications. The device is manufactured in IATF 16949 certified facilities, ensuring quality standards for automotive and industrial markets. The marking code '33N' identifies the device on the package.

Replacement Considerations

DMN3300U-7

FAQ

Is the DMN3300UQ-7 suitable for automotive applications?

Yes, the DMN3300UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.