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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.89A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：890mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：38.4pF @ 15V
- Power - Max：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN3350LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage (Vds) and a continuous drain current (Id) of 890mA at ambient temperature. The device utilizes SOT-363 surface-mount packaging, providing two independent channels within a compact footprint. Key electrical parameters include a maximum on-resistance (Rds(on)) of 400 mOhms per channel and a power dissipation rating of 340mW. The component operates within a temperature range of -55°C to +150°C, supporting standard surface mount assembly processes for high-density circuit designs.
Feature Summary
- Dual N-channel configuration in a single compact package
- Low on-resistance for efficient signal switching
- Enhancement mode operation with standard gate drive compatibility
Applications
- Signal switching in portable electronic devices
- Battery protection circuits
- General purpose low-power switching applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity when sourcing from distributors. Confirm that the SOT-363 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives as indicated in official manufacturer documentation prior to final procurement decisions.
Selection Notes
Select this component for applications requiring dual N-channel switching in space-constrained environments. The 30V rating suits low-voltage logic interfaces. Evaluate thermal management requirements given the 340mW dissipation limit. Compare Rds(on) specifications against similar dual MOSFETs to ensure optimal efficiency for the intended load currents.
Part Context
This part belongs to the DMN series of dual MOSFET arrays from Diodes Incorporated. These components are designed for general-purpose switching tasks where board space is limited. The SOT-363 package allows for automated surface mount placement, integrating well with modern manufacturing lines for consumer electronics and industrial control modules.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs in the SOT-363 package offering comparable Vds and Id ratings. Verify pinout compatibility before substituting. Check datasheets for equivalent Rds(on) and threshold voltage characteristics to maintain circuit performance integrity.
