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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X1-DFN1006
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：350mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：38.4 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN3350LFB-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 1.6 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 240 mΩ at a gate-source voltage (Vgs) of 4.5 V. Packaged in an X1-DFN1006-3 surface-mount footprint, it operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 600 mW.
Feature Summary
- Single N-channel configuration for compact circuit integration
- Low on-resistance optimized for efficient power switching
- Enhancement mode operation compatible with standard logic levels
Applications
- Battery protection circuits
- Power management modules
- Load switch applications
Procurement Notes
Verify the specific suffix '7B' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and marking codes. Ensure the ordering part number matches the required package variant, as suffixes may indicate differences in reel quantity or environmental compliance status without altering electrical performance.
Selection Notes
Select this component when a small-footprint N-channel MOSFET is required for low-voltage switching applications. The 240 mΩ Rds(on) provides a balance between conduction loss and package thermal limits. Verify that the 1.6 A current rating meets the peak load requirements, considering the derating curve associated with the X1-DFN1006-3 package thermal resistance.
Part Context
This device belongs to Diodes Incorporated's portfolio of silicon N-channel MOSFETs designed for portable and consumer electronics. The X1-DFN1006-3 package allows for high-density PCB layouts compared to traditional SOT-23 packages. It serves as a discrete solution for managing power distribution in space-constrained designs requiring reliable switching performance.
Replacement Considerations
Cross-reference with other Diodes Incorporated parts in the DMN series sharing the X1-DFN1006-3 package. Confirm that substitute devices maintain identical pinout configurations and meet or exceed the 30 V Vds and 240 mΩ Rds(on) specifications to ensure circuit compatibility.
