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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.25A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：350mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN33D8LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device supports a continuous drain current (ID) of 250 mA at +25°C, with a typical static drain-source on-resistance (RDS(ON)) of 2.4 Ω at VGS = 10 V and ID = 250 mA. Total gate charge (Qg) is typically 1.23 nC at VGS = 10 V. Thermal characteristics include a total power dissipation (PD) of 0.35 W at +25°C and a junction-to-ambient thermal resistance (RθJA) of 360 °C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT363 package for space-constrained designs
- Optimized low on-resistance combined with fast switching performance
- ESD protected gate structure rated up to 2 kV
- Qualified to AEC-Q101 standards for high reliability automotive applications
Applications
- Motor control circuits
- Power management functions
- DC-DC converters
- Backlighting systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The '-7' suffix indicates a 3K tape and reel configuration. Confirm RoHS compliance and halogen-free status requirements match project specifications. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks.
Selection Notes
Select this component when dual N-channel switching is required within a 30 V system. Evaluate RDS(ON) values at the actual operating gate voltage, as resistance increases significantly below 4.5 V. Consider the 0.35 W power dissipation limit and thermal resistance when designing heat dissipation strategies for dense PCB layouts.
Part Context
This part belongs to the DMN33 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same electrical specifications and pinout as the DMN33D8LDW-13 variant, which differs only in its 10K tape and reel packaging quantity. Both variants utilize the SOT363 surface-mount case.
Replacement Considerations
The DMN33D8LDW-13 is a direct functional equivalent with identical electrical parameters and pinout, differing solely in packaging quantity. Verify that any alternative dual N-channel MOSFET matches the 30 V VDS rating, SOT363 footprint, and RDS(ON) characteristics before substitution.
FAQ
What is the maximum continuous drain current at elevated temperatures?
The continuous drain current decreases to 200 mA when the ambient temperature reaches +70°C.
How does the on-resistance vary with gate voltage?
RDS(ON) is typically 2.4 Ω at VGS = 10 V, increasing to 3.0 Ω at VGS = 4.5 V, 5.0 Ω at VGS = 4.0 V, and 7.0 Ω at VGS = 2.5 V.
Is the device suitable for automotive applications?
Yes, the DMN33D8LDW is qualified to AEC-Q101 standards for high reliability automotive applications.
