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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.25A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN33D8LDWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a maximum continuous drain current (I_D) of 250 mA at +25°C, with an on-resistance (R_DS(ON)) of 3 Ω at V_GS = 4.5 V and 5 Ω at V_GS = 4.0 V. Total power dissipation is rated at 0.35 W at +25°C. Operating temperatures range from -55°C to +150°C. The component utilizes a SOT363 surface-mount package.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Low on-resistance and low input capacitance design
- Fast switching speed capabilities
- ESD protected structure
Applications
- Motor control circuits
- DC-DC converters
- Backlighting systems
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The suffix indicates packaging quantity; for example, -7 denotes 3,000 units per tape and reel, while -13 denotes 10,000 units per tape and reel. Confirm that the required packaging format aligns with manufacturing equipment specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs in a compact SOT363 footprint. Evaluate R_DS(ON) performance at the intended gate drive voltage, as resistance varies significantly between 2.5 V and 10 V logic levels. Consider thermal management constraints due to the 0.35 W power dissipation limit in steady-state conditions. Verify that the 30 V breakdown voltage meets circuit requirements.
Part Context
This part belongs to the DMN33 series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series targets automotive-grade applications requiring high reliability and small form factors. The DMN33D8LDWQ variant specifically integrates two independent N-channel transistors within a single SOT363 package to save board space.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified dual N-channel MOSFETs in SOT363 packages with comparable 30 V ratings. Verify pinout compatibility and electrical parameters such as R_DS(ON) and Qg before substitution. Cross-referencing with similar Diodes Incorporated parts like the DMN33D8LDW-7 may be necessary if packaging quantities differ.
