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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN33D8LVQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 2.4Ω at VGS = 10V and ID = 250mA, rising to 7Ω at VGS = 2.5V. Total gate charge (Qg) is typically 0.55nC at VGS = 4.5V and 1.23nC at VGS = 10V. Input capacitance (Ciss) is 48pF. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- AEC-Q101 qualified with PPAP capability for automotive suitability
- ESD protected gate structure with low input capacitance for fast switching
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor controls
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. The '-7' suffix indicates a standard tape and reel packing format. Confirm that the required AEC-Q101 qualification and IATF 16949 manufacturing standards align with project specifications before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring a compact dual N-channel solution with low on-resistance. Ensure the gate drive voltage meets the threshold requirements for the desired RDS(ON) performance. Verify thermal dissipation capabilities within the SOT563 package constraints for the intended operating temperature range and load conditions.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the DMN33 family designation but utilizes the LVQ variant for specific automotive and industrial reliability standards. The device integrates two independent channels in a single surface-mount package to save board space.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in the SOT563 package with comparable BVDSS and ID ratings. Verify pinout compatibility and electrical parameters such as RDS(ON) and Qg when cross-referencing with alternative manufacturers or different product lines within the same manufacturer's portfolio.
