DMN34D0U-13

$0.03

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:92415e570f94 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：24 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：440mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN34D0U-13

Overview

The DMN34D0U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 25V and a continuous drain current (ID) of 0.3A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 4Ω at VGS = 4.5V and 5Ω at VGS = 2.7V. Packaged in a surface-mount SOT23 format, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, including being halogen-free, antimony-free, and fully RoHS compliant. Ensure the selected package matches the SOT23 footprint requirements for your printed circuit board layout.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with a 25V breakdown voltage. Evaluate the RDS(ON) specifications against your operating gate drive voltages, specifically noting the resistance values at 4.5V and 2.7V. Consider the thermal characteristics and maximum power dissipation limits when designing for steady-state or pulsed current conditions within the specified temperature range.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount package. The product line is designed to minimize on-state resistance while maintaining superior switching performance for modern electronic designs.