DMN34D0U-7

Overview

The DMN34D0U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 25V and a gate-source voltage (VGSS) rating of 8V. The device provides a continuous drain current (ID) of 0.3A at +25°C, with a pulsed drain current (IDM) capability of 1.8A. Static drain-source on-resistance (RDS(ON)) is specified as 4Ω at VGS = 4.5V and 5Ω at VGS = 2.7V. The component utilizes a SOT23 surface-mount package.

Feature Summary

• Low on-resistance for high-efficiency power management
• Low gate threshold voltage for easy drive compatibility
• ESD protected gate structure
• Totally lead-free and fully RoHS compliant

Applications

• DC-DC converters
• Power-management functions
• Battery operated systems
• Solid-state relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a standard tape and reel carrier containing 3,000 units per reel. Confirm that the required RoHS compliance level matches your manufacturing standards, as this product is fully RoHS compliant and halogen-free. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a low-cost, small-footprint N-channel MOSFET is required for low-current switching applications. The 25V breakdown voltage suits low-voltage DC-DC converter designs. Verify that the 4Ω RDS(ON) meets the thermal dissipation requirements for the intended load current. The SOT23 package is suitable for space-constrained PCB layouts requiring surface-mount assembly.

Part Context

This part belongs to the DMN34 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power-management applications where compact size and cost-effectiveness are critical design parameters.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs in the SOT23 package with similar BVDSS and ID ratings. Verify pinout compatibility and ensure equivalent or lower RDS(ON) values if thermal performance is a constraint. Confirm that replacement parts meet the same RoHS and environmental specifications.

FAQ

What is the maximum continuous drain current for the DMN34D0U-7?

The maximum continuous drain current is 0.3A at an ambient temperature of +25°C.

Is the DMN34D0U-7 suitable for automotive applications?

For automotive applications requiring AEC-Q100/101 qualification and IATF 16949 certified manufacturing, contact Diodes Incorporated directly, as the standard DMN34D0U-7 may not include these specific automotive certifications.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(TH)) ranges from a minimum of 0.7V to a maximum of 1.1V, tested at VDS = VGS and ID = 250µA.