DMN3731U-7

$0.19

Description：MOSFET N-CH 30V 900MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:008f0e4dc50e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 900MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3731U-7

Overview

The DMN3731U-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 0.9A at +25°C. The device offers low on-state resistance, specified as 460mΩ max at V_GS=4.5V and 560mΩ max at V_GS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.45V to 0.95V, total gate charge of 5.5nC, and input capacitance of 73pF. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Feature Summary

Low gate threshold voltage enables direct driving from battery sources
Optimized for high-efficiency power management with minimized on-state resistance
Integrated ESD protection on the gate terminal

Applications

Load switching circuits
Portable electronic applications
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel quantity configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the procurement channel is authorized to avoid counterfeit risks. Check datasheet revision DS40980 Rev. 3-2 for the most current mechanical and electrical specifications before finalizing orders.

Selection Notes

Select this component for applications requiring a 30V N-channel switch with moderate current handling up to 0.9A. Consider the low gate threshold voltage if the control logic operates at lower voltages. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to the DMN3731U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a standard SOT-23 surface-mount case. The product line is designed to balance low conduction losses with fast switching performance for compact power management designs.

Replacement Considerations

Cross-reference with other 30V N-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and ensure equivalent or superior R_DS(ON) and V_GS(th) specifications are met for direct substitution.