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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：670mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1010-3
- Package / Case：3-XFDFN
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Overview
The DMN3731UFR4-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 1.3A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 460mΩ at VGS = 4.5V and 560mΩ at VGS = 2.5V. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 0.67W in steady state.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed capabilities
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Power-management functions
- Backlighting circuits
- Load switches
Procurement Notes
Verify the exact ordering suffix against official Diodes documentation to confirm packaging specifications. Confirm that the X2-DFN1010-3 package dimensions match your PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 standards during storage and handling procedures.
Selection Notes
Select this component when low on-resistance and fast switching are required for compact power designs. The X2-DFN1010-3 package provides a small form factor suitable for space-constrained applications. Evaluate thermal performance based on the specific copper area available on the printed circuit board layout.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets modern power-management applications requiring high efficiency and compact footprints.
Replacement Considerations
Consult official Diodes documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON). Verify package compatibility before implementation.
