DMN3731UFR4-7R

$0.03

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9a1de457a9eb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：670mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-3
Package / Case：3-XFDFN

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DMN3731UFR4-7R

Overview

The DMN3731UFR4-7R is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 1.3A at +25°C. The device offers a low on-resistance (RDS(ON)) of 460mΩ at VGS = 4.5V and 560mΩ at VGS = 2.5V. Packaged in an X2-DFN1010-3 surface-mount format, it supports a maximum junction temperature of +150°C and includes ESD protection for the gate terminal.

Feature Summary

Low on-state resistance to minimize power loss
Fast switching speed for high-efficiency performance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Power-management functions
Backlighting circuits
Load switches

Procurement Notes

Verify the exact ordering suffix matches the required packaging configuration. Confirm that the component meets specific automotive qualification standards if intended for such environments. Ensure the design accounts for the thermal characteristics provided in the datasheet under actual operating conditions.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. Evaluate the thermal resistance values against the expected power dissipation in the target application. Consider the gate threshold voltage range to ensure compatibility with the driving logic levels.

Part Context

This part belongs to the DMN3731UFR4 series from Diodes Incorporated. It utilizes the X2-DFN1010-3 package, which provides a small footprint suitable for modern surface-mount assembly processes. The series is designed to balance low conduction losses with robust switching capabilities.