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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：420mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3732U-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-state resistance, with RDS(ON) values of 460mΩ at VGS=4.5V, 560mΩ at VGS=2.5V, and 730mΩ at VGS=1.8V. Continuous drain current (ID) reaches 1A at VGS=4.5V and 0.9A at VGS=2.5V. Total power dissipation is rated at 0.42W to 0.65W depending on mounting conditions. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Features a low gate threshold voltage to facilitate easy drive requirements.
- Includes ESD protection on the gate terminal.
- Totally lead-free and fully RoHS compliant.
Applications
- Load switches in portable electronics
Procurement Notes
Verify that the ordering suffix '-7' corresponds to the specific SOT23 package marking '2U2' and a reel size of 7 inches with a packing quantity of 3,000 units. Confirm compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment does not exceed the specified thermal resistance limits or junction temperature range.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for portable electronics load switching. Consider the 0.42W to 0.65W power dissipation capability based on the PCB copper area and substrate type. Verify that the gate drive voltage meets the minimum thresholds for the desired continuous drain current levels.
Part Context
This part belongs to the DMN3732U series of advanced information N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a SOT23 surface-mount package designed for space-constrained applications. The device is constructed using silicon technology and is intended for general-purpose switching tasks where low conduction loss is critical.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the typical total gate charge (Qg) for the DMN3732U-7?
The typical total gate charge (Qg) is 0.9 nC, measured at VGS = 4.5V, VDS = 15V, and ID = 1A.
Is the DMN3732U-7 suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/104/200, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated directly.
